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The purpose of this study is that the effects of surface mount technology (SMT) assembly process on the product lifetime of fine-pitch printed circuit boards (PCBs) were investigated under biased highly accelerated stress testing (HAST).

SMT assembly from a semiconductor SMT assembly process was replicated to test PCBs under the same conditions as SMT-assembled PCBs. The median lives µ and standard deviation s of the test PCBs were calculated from the log-normal distribution. The failure analysis of current leakages was conducted by the focused ion beam, scanning electron microscopy and energy-dispersive X-ray spectroscopy. Using the inverse power law and modified Peck-H’s relationship, the PCB lives at accelerated (by SMT assembly stress) and user conditions were calculated.

The failure analysis demonstrated that SiO₂ and BaSO₄ fillers added for stiffening organic materials promote current leakage failure. Therefore, the hydrophobicity of these fillers is believed to be necessary to suppress the current leakage failure under biased HAST. The inverse power law model indicates that the acceleration life model with SMT assembly stress can be given as follows: L(V) = 271.9(S)^−0.5031. From modified Peck-H’s relationship, after the third SMT assembly, the time required to attain 0.96 per cent failures at 35°C/60 per cent RH/1.9 V and 130°C/85 per cent RH/3.5 V are 129 y and 69.5 h, respectively. The biased HAST at 130°C/85 per cent/3.5 V after the third SMT assembly for 69.5 h on 238 samples could be recommended as an early quality-monitoring procedure.

In the future, the failure modes in an early stage of a bathtub should be analyzed and the life prediction model should be studied accordingly.

Through this study, the lifetime prediction model and early quality-monitoring procedure for organic substrates because of SMT assembly stress were obtained.

The purpose of this paper is to evaluate the relationship between the Cu trace and epoxy resin and to check the validity of surface and interfacial cutting analysis system (SAICAS) by comparing its results to those of the 90° peel test.

In this study, the effects of surface morphology on the adhesion strength were studied for a Cu/epoxy resin system using a SAICAS. In order to evaluate the peel strength of the sample, the curing degree and surface morphology of the epoxy resin were varied in the Cu/epoxy resin system.

The results indicated that the peel strength is strongly affected by the curing degree and the surface morphology of the epoxy layer. As the pre-cure time increased, the interactions between the epoxy resin and permanganate during the adhesion promotion process decreased, which decreased the surface roughness (Ra) of the resin. Therefore, the surface roughness of the epoxy resin decreased with increasing pre-cure time. The curing degree was calculated with the FTIR absorption peak (910 cm−1) of the epoxy groups. The high curing degree for the epoxy resin results in a coral-like morphology that provides a better anchoring effect for the Cu trace and a higher interfacial strength.

It is necessary to study the further adhesion strength, i.e. the friction energy, the plastic deformation energy, and the interfacial fracture energy, in micro- and nanoscale areas using SAICAS owing to insufficient data regarding the effects of size and electroplating materials.

From findings, it is found that measuring the peel strength using SAICAS is particularly useful because it makes the assessment of the peel strength in the Cu/epoxy resin system of electronic packages possible.

This study aims to elucidate the reaction mechanism of electroless NiP deposits on conductive but non-catalytic Cu films on the basis of their nucleation and growth without Pd catalyst and to measure the deposition rate and activation energy of electroless NiP deposits on the non-catalytic Cu film at various deposition times (60, 120, 240 and 480 s) and temperatures (70, 80 and 90°C) at pH 4.6.

Specimens with and without Pd catalyst on Cu film were prepared as follows: the Pd catalyst was deposited on half of the Cu film using a deposition protector, and the specimen containing the Pd catalyst deposited on half of its area was immersed in electroless NiP solution. The growth of NiP on the Cu films with and without the Pd catalyst was observed.

The number of Pd nanoparticles increased with Pd activation time; the nucleation of Pd dominated over growth at 60 s. Lattice images show that the d-spacing of Ni nanoparticles doped with less than 10 at% P increased to 2.050 Å. Nucleation of NiP deposits occurred simultaneously in the specimens with and without the Pd catalyst, because electrons could be transferred via the conductive Cu. Therefore, the reaction mechanism of the electroless NiP deposited on Cu film appears to be electrochemical. The activation energies for NiP deposits (15 s Pd with catalytic Pd, 15 s Pd without catalytic Pd, 60 s Pd with catalytic Pd and 60 s Pd without catalytic Pd) on the Cu film are 65.8, 64.0, 64.3 and 58.1 kJ/mol, respectively. This demonstrates that, regardless of the volume and the presence of catalytic Pd, the activation energy of electroless NiP has a consistent value.

It is necessary to study the relationship between the volume of Pd nanoparticles and the nucleation rate of NiP at an initial stage, as there are limited data regarding the effect of Pd volume on the nucleation rate of NiP.

The reaction mechanism of the electroless NiP deposited on conductive but non-catalytic Cu film involves electrochemical reactions because the nucleation of NiP deposits occurs on conductive Cu film regardless of the presence of the Pd catalyst.